Threading dislocation reduction in transit region of GaN terahertz Gunn diodes

被引：6
|
作者：
Li, Liang [1 ]
Yang, Lin-An [1 ]
Zhang, Jin-Cheng [1 ]
Xue, Jun-Shuai [1 ]
Xu, Sheng-Rui [1 ]
Lv, Ling [1 ]
Hao, Yue [1 ]
Niu, Mu-Tong [2 ]
机构：
[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 07期
关键词：
SILICON; GROWTH; STRESS; EPITAXY; FILMS; LAYER; SI;
D O I：
10.1063/1.3685468
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An effect of the position of notch-doping layer in 1-mu m GaN Gunn diode on threading dislocations (TDs) distribution is investigated by transmission electron microscopy. Compared with the top-notching-layer (TNL) structure, the bottom-notching-layer (BNL) structure can efficiently reduce the TDs density and improve the crystal quality in the transit region of GaN Gunn diode because it exhibits twice-transition of growth mode from atomic step flow to layer-by-layer nucleation and leads to a significant annihilation of TDs before penetrating into the transit region. X-ray diffraction and Raman spectroscopy reveal that the BNL structure has less compressive stress than the TNL structure. (C) 2012 American Institute of Physics. [doi:10.1063/1.3685468]
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页数：4
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