Raman spectroscopic investigation and thermoelectric studies of defect-induced Mg-doped delafossite thin film

被引：12
|
作者：
Sanam, P. K. Jamshina [1 ]
Shah, Midhun [1 ,2 ]
Pradyumnan, P. P. [1 ]
机构：
[1] Univ Calicut, Dept Phys, Malappuram 673635, Kerala, India
[2] Farook Coll, Dept Phys, Kozhikode 673632, Kerala, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2022年 / 33卷 / 28期
关键词：
CONDUCTIVITY; PROPERTY; FIGURE; MERIT;
D O I：
10.1007/s10854-022-09013-y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Here, we modified the band structure of P-type Mg-doped CuCrO2 thin films by defect-induced lattice compressive strain. A significant increase in p-type conductivity of 33.44 S cm(-1) and enhanced power factor of 679.44 mu W m(-1) K-2 at 200 degrees C were observed for the film of thickness 211 nm. The increased strain from XRD calculations and phonon vibrations mode features of the grown film from Raman spectroscopic investigations, giving an insight to the thermal phonon mode lead to thermoelectric features of the material. Hall effect measurements substantiate the results.
引用
收藏
页码：22346 / 22360
页数：15
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