Plasma ehnancement of metalorganic chemical vapor deposition and properties of Er2O3 nanostructured thin films

被引：6
|
作者：
Giangregorio, Maria M.
Losurdo, Maria
Sacchetti, Alberto
Capezzuto, Pio
Bruno, Giovanni
Malandrino, Graziella
Fragala, Ignazio L.
Lo Nigro, Raffaella
Armelao, Lidia
Barreca, Davide
Tondello, Eugenio
机构：
[1] CNR, IMIP, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy
[2] INSTM UdR Bari, I-70126 Bari, Italy
[3] Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy
[4] CNR, IMM, Inst Microelect & Microsyst, I-95121 Catania, Italy
[5] CNR, ISTM, I-35131 Padua, Italy
[6] Univ Padua, INSTM, I-35131 Padua, Italy
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 06期
关键词：
D O I：
10.1063/1.2768915
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An O-2 remote plasma metal organic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological, and optical properties of Er2O3 thin films grown on Si(100) using the tris(isopropylcyclopentadienyl)erbium precursor. The RP-MOCVD approach produced highly (100)-oriented, dense, and mechanically stable Er2O3 films with columnar structure.
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页数：3
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