Gate-controlled spin transport in a spin-diode structure

被引：3

作者：

Li, Yuan ^{[1
,2
]}

Jalil, Mansoor B. A. ^{[1
,3
]}

Tan, Seng Ghee ^{[3
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Informat Storage Mat Lab, Singapore 117576, Singapore

[2] Hangzhou Dianzi Univ, Dept Phys, Hangzhou 310018, Peoples R China

[3] Natl Univ Singapore, Data Storage Inst, Singapore 117608, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 09期

关键词：

COULOMB-BLOCKADE; SINGLE-ELECTRON; MAGNETORESISTANCE; SPINTRONICS;

D O I：

10.1063/1.4712027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the spin transport in a spin-diode structure consisting of a quantum dot (QD) coupled to a ferromagnetic lead and a nonmagnetic (NM) lead. Electron transport through the QD system is investigated theoretically by means of the nonequilibrium Keldysh Green's function technique. The presence of a spin bias in the NM lead induces a charge current, which shows an asymmetric "spoon-like" current-bias characteristic. The spoon-like profile can be suppressed by tuning the energy level of the QD via the gate voltage. The maximum spin-bias-induced current occurs when the tunnel couplings across the left and the right tunnel barriers are close to each other for spin-up or spin-down electrons. The effect of the tunnel couplings can thus be utilized in the design of spin-diode structures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712027]

引用

页数：5

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