Applications of microcrystalline hydrogenated cubic silicon carbide for amorphous silicon thin film solar cells

被引：5

作者：

Ogawa, Shunsuke ^{[1
]}

Okabe, Masaaki ^{[1
]}

Ikeda, Ytiusuke ^{[1
]}

Itoh, Takashi ^{[2
]}

Yoshida, Norimitsu ^{[1
,3
]}

Nonomura, Shuichi ^{[1
,3
]}

机构：

[1] Gifu Univ, Environm & Renewable Energy Syst, Gifu 5011193, Japan

[2] Gifu Univ, Fac Engn, Dept Elect & Elect Engn, Gifu 5011193, Japan

[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

silicon carbide; titanium dioxide; solar cells; Hot-wire CVD;

D O I：

10.1016/j.tsf.2007.06.047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrated the fabrication of n-i-p type amorphous silicon (a-Si:H) thin film solar cells using phosphorus doped microcrystalline cubic silicon carbide (mu c-3C-SiC:H) films as a window layer. The Hot-wire CVD method and a covering technique of titanium dioxide TiO2 on TCO was utilized for the cell fabrication. The cell configuration is TCO/TiO2/n-type mu c-3C-SiC:H/intrinsic a-Si:H/p-type mu c- SiCx (a-SiCx:H including mu c-Si:H phase)/Al. Approximately 4.5% efficiency with a V-oc of 0.953 V was obtained for AM-1.5 light irradiation. We also prepared a cell with the undoped a-Si-1_C-x(x):H film as a buffer layer to improve the n/i interface. A maximum V-oc of 0.966 V was obtained. (c) 2007 Published by Elsevier B.V.

引用

页码：740 / 742

页数：3

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