Gate-tunable Thermoelectric Effects in a Graphene/WS2 van der Waals Heterostructure

被引：6

作者：

Lee, Junho ^{[1
]}

Son, Minsol ^{[1
]}

Jeong, Hyebin ^{[1
]}

Sim, Injip ^{[1
]}

Myoung, Nojoon ^{[1
]}

机构：

[1] Chosun Univ, Dept Phys Educ, Gwangju 61452, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2018年 / 73卷 / 07期

关键词：

Graphene; van der Waals Heterostructures; Thermoelectric effects; Seebeck coefficient; Tunnel junction; TRANSPORT; EMISSION; GAS; BN;

D O I：

10.3938/jkps.73.940

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thermoelectric effects of Dirac fermions through a van der Waals (vdW) heterostructure consisting of graphene and tungsten diselenide (WS2) are theoretically investigated. When the lattice temperature of the top graphene layer differs from that of the bottom graphene layer, thermally excited Dirac fermions can be transferred through the WS2 layer, generating tunnel current. This thermoelectric tunnel current shows drastic changes in its characteristics as a consequence of gatevoltage tuning. The thermoelectric power of the proposed graphene-WS2 vdW heterostructure is characterized by examining the Seebeck coefficient.

引用

页码：940 / 944

页数：5

共 50 条

[1] Gate-tunable Thermoelectric Effects in a Graphene/WS2 van der Waals Heterostructure
Junho Lee
Minsol Son
Hyebin Jeong
Injip Sim
Nojoon Myoung
Journal of the Korean Physical Society, 2018, 73 : 940 - 944
[2] Plasmonic WS2 Nanodiscs/Graphene van der Waals Heterostructure Photodetectors
Alamri, Mohammed
Gong, Maogang
Cook, Brent
Goul, Ryan
Wu, Judy Z.
ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (36) : 33390 - 33398
[3] Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode
Dastgeer, Ghulam
Khan, Muhammad Farooq
Nazir, Ghazanfar
Afzal, Amir Muhammad
Aftab, Sikandar
Naqvi, Bilal Abbas
Cha, Janghwan
Min, Kyung-Ah
Jami, Yasir
Jung, Jongwan
Hong, Suklyun
Eom, Jonghwa
ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (15) : 13150 - 13157
[4] Tunable van der Waals Doping in WS2/CrOCl Heterostructure by Interlayer Coupling Engineering
Liu, Dongdong
Zhou, Yu
Zheng, Shengqian
Liu, Xiaochi
Sun, Jian
Li, Zhuolun
Zhang, Zhenxiao
Zhang, Zhineng
Wang, Shaolong
Cai, Dongyu
Cheng, Yingchun
Huang, Wei
ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (07) : 3973 - 3980
[5] Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor
Wang, Chen-Yu
Liang, Shi-Jun
Wang, Shuang
Wang, Pengfei
Li, Zhu'an
Wang, Zhongrui
Gao, Anyuan
Pan, Chen
Liu, Chuan
Liu, Jian
Yang, Huafeng
Liu, Xiaowei
Song, Wenhao
Wang, Cong
Wang, Xiaomu
Chen, Kunji
Wang, Zhenlin
Watanabe, Kenji
Taniguchi, Takashi
Yang, J. Joshua
Miao, Feng
Cheng, Bin
SCIENCE ADVANCES, 2020, 6 (26)
[6] Van der Waals twistronics in a MoS2/WS2 heterostructure
Sachin, Saurav
Kumari, Puja
Gupta, Neelam
Rani, Shivani
Kar, Subhasmita
Ray, Soumya Jyoti
COMPUTATIONAL CONDENSED MATTER, 2023, 35
[7] Q-switching of waveguide lasers based on graphene/WS2 van der Waals heterostructure
Li, Ziqi
Cheng, Chen
Dong, Ningning
Romero, Carolina
Lu, Qingming
Wang, Jun
Vazquez de Aldana, Javier Rodriguez
Tan, Yang
Chen, Feng
PHOTONICS RESEARCH, 2017, 5 (05) : 406 - 410
[8] Q-switching of waveguide lasers based on graphene/WS2 van der Waals heterostructure
ZIQI LI
CHEN CHENG
NINGNING DONG
CAROLINA ROMERO
QINGMING LU
JUN WANG
JAVIER RODRíGUEZ VáZQUEZ DE ALDANA
YANG TAN
FENG CHEN
Photonics Research, 2017, 5 (05) : 406 - 410
[9] Gate-tunable van der Waals heterostructure based on semimetallic WTe2 and semiconducting MoTe2
Xie, Yuan
Wu, Enxiu
Geng, Guangyu
Zhang, Daihua
Hu, Xiaodong
Liu, Jing
APPLIED PHYSICS LETTERS, 2021, 118 (13)
[10] Interlayer Trions in the MoS2/WS2 van der Waals Heterostructure
Deilmann, Thorsten
Thygesen, Kristian Sommer
NANO LETTERS, 2018, 18 (02) : 1460 - 1465

← 1 2 3 4 5 →