Hydrostatic Pressure study of Structural, Electronic and Magnetic Properties of Ga0.75Mn0.25As

被引：2
|
作者：
Rani, Anita [1 ]
Kumar, Navneet [2 ]
机构：
[1] Guru Nanak Coll Girls, Sri Muktsar Sahib 152026, Punjab, India
[2] DAV Coll, Sect 10, Chandigarh, India
来源：
DAE SOLID STATE PHYSICS SYMPOSIUM 2018 | 2019年 / 2115卷
关键词：
SPINTRONICS; DFT;
D O I：
10.1063/1.5113322
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the first principle calculations of the effect of hydrostatic pressure on the structural, electronic and magnetic properties of Ga0.75Mn0.25As DMS in zb (B3) phase. High pressure behavior of Ga-0.75Mn0.25As has been investigated between 0 GPa to100 GPa The calculations have been performed using DFT as implemented in code SIESTA using LDA+U as exchange-correlation (XC) potential. Study of band structures shows half-metallic ferromagnetic nature with 100% spin polarization at P > 0GPa. Under application of external pressure, the valence band and conduction band are shifted downward from their positions, which lead to modification of electronic structure.
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页数：4
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