Effect of Image Force on Tunneling Current for Ultra Thin Oxide Layer Based Metal Oxide Semiconductor Devices

被引：13

作者：

Maity, N. P. ^{[1
]}

Maity, R. ^{[1
]}

Thapa, R. K. ^{[2
]}

Baishya, S. ^{[3
]}

机构：

[1] Mizoram Univ, Dept Elect & Commun Engn, Aizawl 796004, India

[2] Mizoram Univ, Dept Phys, Aizawl 796004, India

[3] Natl Inst Technol, Dept Elect & Commun Engn, Silchar 788010, India

来源：

NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2015年 / 7卷 / 04期

关键词：

MOS; Image Force; ATLAS; Tunneling Current; MOS STRUCTURES;

D O I：

10.1166/nnl.2015.1970

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this letter, an analytical model for evaluation of tunneling current density of ultra thin Metal Oxide Semiconductor (MOS) devices is presented. For such devices, the area of the potential barrier is reduced by rounding off the corners, reducing the thickness due to image potential, hence are very important for accurate modeling. In this work, improvement in the analysis is brought in by taking into account the barrier height lowering due to the image force effect. The voltage range under consideration is 0 <= V <= psi(1)/e. Tunnel resistivity is also evaluated utilizing this tunneling current density model. Theoretical predictions are compared with the results obtained by the 2D numerical device simulator ATLAS and published experimental results, excellent agreements between the three are observed.

引用

页码：331 / 333

页数：3

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