Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties

被引：242
|
作者：
He, JH
Lao, CS
Chen, LJ [1 ]
Davidovic, D
Wang, ZL
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[3] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
来源：
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2005年 / 127卷 / 47期
关键词：
D O I：
10.1021/ja0559193
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors. Copyright © 2005 American Chemical Society.
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页码：16376 / 16377
页数：2
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