High Spin-Torque Diode Sensitivity in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions Under DC Bias Currents

被引：14

作者：

Ishibashi, Shota ^{[1
]}

Ando, Ken ^{[1
]}

Seki, Takeshi ^{[1
,2
]}

Nozaki, Takayuki ^{[1
]}

Kubota, Hitoshi ^{[3
]}

Yakata, Satoshi ^{[3
,4
]}

Maehara, Hiroki ^{[3
]}

Fukushima, Akio ^{[3
]}

Yuasa, Shinji ^{[3
]}

Suzuki, Yoshishige ^{[1
,3
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[4] INAMORI Frontier Res Ctr, Adv Elect Res Div, Fukuoka 819039, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2011年 / 47卷 / 10期

关键词：

Magnetoresistance effect; MgO-based magnetic tunnel junctions (MT[!text type='Js']Js[!/text]); spin-torque diode effect; spin-torque diode sensitivity; ROOM-TEMPERATURE; MAGNETORESISTANCE; MULTILAYER; DRIVEN; EXCITATION; EMISSION;

D O I：

10.1109/TMAG.2011.2159830

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a large enhancement of spin-torque diode sensitivity in CoFeB/MgO/CoFeB magnetic tunnel junctions measured under perpendicular magnetic fields and dc bias currents. In the measurement of homodyne detection, a large dc output voltage of 190 mu V was obtained when an RF signal power of -30 dB m and a dc current of +1.0 mA were applied. This value corresponds to the diode sensitivity of 190 mV/mW (260 mV/mW after impedance matching correction). The main origin of this enhancement is an offset of the damping torque and an increase in the precession angle induced by the spin-transfer torque due to the dc bias current application.

引用

页码：3373 / 3376

页数：4

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