Strain-induced the dark current characteristics in InAs/GaSb type-II superlattice for mid-wave detector

Type-II superlattice (T2SL) materials are the key element for infrared (IR) detectors. However, it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed during the growth process, which determines the performance of IR detectors. Therefore, great efforts have been made to properly control the strain effect and develop relevant analysis methods to evaluate the strain-induced dark current characteristics. In this work, we report the strain-induced dark current characteristics in InAs/GaSb T2SL MWIR photodetector. The overall strain of InAs/GaSb T2SL layer was analyzed by both high-resolution X-ray diffraction (HRXRD) and the dark current measured from the absorber layer at the elevated temperatures (>= 110 K), where the major leakage current component is originated from the reduced minority carrier lifetime in the absorber layer. Our findings indicate that minority carrier lifetime increases as the tensile strain on the InAs/GaSb T2SL is more compensated by the compressive strain through 'InSb-like' interface, which reduces the dark current density of the device. Specifically, tensile strain compensated devices exhibited the dark current density of less than 2 x10(-5)A/cm(2)at 120 K, which is more than one order of magnitude lower value compared to that of the device without tensile strain relaxation.