Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

被引：5
|
作者：
Liu, YX
Sugimata, E
Masahara, M
Endo, K
Ishii, K
Matsukawa, T
Takashima, H
Yamauchi, H
Suzuki, E
机构：
来源：
MICROELECTRONIC ENGINEERING | 2005年 / 80卷
关键词：
FinFET; double-gate MOSFET; orientation-dependent wet etching; rectangular cross-section Si-fin; mobility;
D O I：
10.1016/j.mee.2005.04.014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents, for the first time, the experimental electron mobility in FinFETs with a (111) channel surface fabricated by the orientation-dependent wet etching. The maximum electron mobility (u(eff)) is around 300-cm(2)/V-s, which is close to that in the (111) bulk MOSFETs. Moreover, the value of u(eff) is comparable or better than the reported ones in the usual FinFETs with a (I 10) channel surface prepared with careful surface treatments. This result indicates that the quality and channel surface roughness of the Si-fins by the orientation-dependent wet etching are much better than those fabricated by the conventional reactive ion etching (RIE) process.
引用
收藏
页码：390 / 393
页数：4
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