Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer

In this study, an electron-beam lithography system was employed to pattern 80-nm-wide and 980-nm-spaced multi-mesa-channel for fabricating AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). Since the structure of multi-mesa-channel could enhance gate control capabilities and reduce the self-heating effect in the channel, the performance of the MOSHEMTs could be obviously improved. The direct current performance metrics of the multi-mesa-channel-structured MOSHEMTs, such as a saturation drain-source current of 929 mA/mm, maximum extrinsic transconductance of 223 mS/mm, and on-resistance of 2.1 omega-mm, were much better than those of the planar-structured MOSHEMTs. Moreover, the threshold voltage of the multi-mesa-channel-structured MOSHEMTs shifted toward positive voltage from -2.6 to -0.6 V, which was attributed to the better gate control capability. Moreover, the multi-mesa-channel-structured MOSHEMTs also had superior high-frequency and low-frequency noise performance. A low Hooge's coefficient of 1.17 x 10(-6) was obtained.