Dielectric response of soft modes in ferroelectric thin films

被引：31

作者：

Petzelt, J ^{[1
]}

Kuzel, P ^{[1
]}

Rychetsky, I ^{[1
]}

Pashkin, A ^{[1
]}

Ostapchuk, T ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic

来源：

FERROELECTRICS | 2003年 / 288卷

关键词：

ferroelectric soft mode; thin films; effective dielectric response; far-infrared spectroscopy; time-domain THz spectroscopy; Raman spectroscopy;

D O I：

10.1080/00150190390211891

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The concept of effective soft mode in thin films and its role in the effective dielectric response of high-permittivity thin films is introduced. Compared to bulk soft mode response, it may be strongly influenced by stresses from the substrate and dielectric inhomogeneities like interface layers, grain boundaries and porosity. The available techniques for the determination of the effective soft-mode response (far-infrared and time-domain THz spectroscopies) are discussed. The experiments on various ferroelectric (PbTiO3, PZT, BaTiO3, SrBi2Ta2O9), incipient ferroelectric (SrTiO3), doped incipient ferroelectric (SrTiO3:Ba), and relaxor ferroelectric (PLZT) films are briefly reviewed and compared with the results in bulk materials.

引用

页码：169 / 185

页数：17

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