Effect of illumination on the rate of relaxation of light-induced metastable states in a-Si:H(B)

被引：1

作者：

Kurova, IA ^{[1
]}

Ormont, NN

Gromadin, AL

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia

[2] State Res Inst Rare Met Ind, GIREDMET, Moscow 109017, Russia

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 06期

关键词：

D O I：

10.1134/1.1582544

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Time dependences of the rates of relaxation of light-induced metastable states of electrically active impurity atoms in boron-doped a-Si:H films have been studied in the dark and under illumination. It has been established that under illumination the rate of relaxation of light-induced metastable states of boron atoms grows in the initial stage when the rate of light-induced relaxation of these states exceeds that of their light-induced generation. (C) 2003 MAIK "Nauka / Interperiodica".

引用

页码：727 / 729

页数：3

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