Surfactant-mediated epitaxy of ge on Si(111):: Beyond the surface -: art. no. 111910

被引:26
|
作者
Schmidt, T
Kröger, R
Clausen, T
Falta, J
Janzen, A
Kammler, M
Kury, P
Zahl, P
Horn-von Hoegen, M
机构
[1] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany
[2] Univ Duisburg Essen, Inst Laser & Plasma Phys, D-45117 Essen, Germany
关键词
D O I
10.1063/1.1882760
中图分类号
O59 [应用物理学];
学科分类号
摘要
For a characterization of interface and "bulk" properties of Ge films grown on Si(111) by Sb surfactant-mediated epitaxy, grazing incidence x-ray diffraction and transmission electron microscopy have been used. The interface roughness, defect structure, and strain state have been investigated in dependence of film thickness and growth temperature. For all growth parameters, atomically smooth interfaces are observed. For thin Ge layers, about 75% of the strain induced by the lattice mismatch is relaxed by misfit dislocations at the Ge/Si interface. Only a slight increase of the degree of relaxation is found for thicker films. At growth temperatures below about 600 degrees C, the formation of twins is observed, which can be avoided at higher temperatures. (C) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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