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Design and simulation of a novel multi-floating-gate synaptic nanowire transistor for neuromorphic computing
被引:0
|作者:
Li, Xiaokang
[1
]
Yang, Yuancheng
[1
]
Chen, Gong
[1
]
Sun, Shuang
[1
]
Cai, Qifeng
[1
]
Dong, Xiaoqiao
[1
]
Xu, Xiaoyan
[1
]
An, Xia
[1
]
Li, Ming
[1
]
Huang, Ru
[1
]
机构:
[1] Peking Univ, Key Lab Microelect Devices & Circuits, Inst Microelect, Beijing 100871, Peoples R China
来源:
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
|
2018年
基金:
中国国家自然科学基金;
关键词:
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
In this paper, we proposed a novel multi-floating-gate synaptic nanowire transistor which can emulate synapses behaviors such as long-term potentiation (LTP), long-term depression (LTD), integration signals from multiple pre synapses and successive synaptic weight modulation, it can also realize high density interconnection in current CMOS IC technology to build complex neural network. Meanwhile, a novel scheme was also proposed to simulate amplitude-adjustable function by properly controlling the polarity-gates. Therefore, the multiple synaptic behaviors can be realized by the proposed new device, making it a competitive candidate for neuromorphic systems.
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页码:867 / 869
页数:3
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