The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures

被引：0
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作者：
Vostokov, NV
Gusev, SA
Drozdov, YN
Krasilnik, ZF
Lobanov, DN
Mesters, N
Miura, M
Moldavskaya, LD
Novikov, AV
Pascual, J
Postnikov, VV
Shiraki, Y
Uakhimchuk, VA
Usami, N
Valakh, MY
机构：
[1] Inst Phys Microstruct RAS, Nizhnii Novgorod 603600, Russia
[2] Univ Autonoma Barcelona, Dept Fis, Bellaterra, Spain
[3] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo, Japan
[4] Inst Semicond Phys NAS, UA-03028 Kiev, Ukraine
来源：
PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2001年 / 3-4卷
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of alloying on growth and parameters of GeSi self-assembled islands has been investigated by atomic force microscopy, Raman scattering and X-ray analysis. A decrease of the islands sizes with reduction of growth temperature is associated with an increase of Ge content in the islands. Enhancement of alloying and coarsening of islands grown at 750 degreesC causes a spread of the island size distribution. A transition of the islands shape from dome to pyramid has been observed directly during Ge deposition at this temperature.
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页码：295 / 301
页数：7
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