Temperature-induced isostructural phase transition on NaCe(MoO4)2 system: A Raman scattering study

被引:17
|
作者
Moura, J. V. B. [1 ]
Luz-Lima, C. [2 ]
Pinheiro, G. S. [2 ]
Freire, P. T. C. [1 ]
机构
[1] Univ Fed Ceara, Dept Fis, Campus Pici,POB 6030, BR-60455970 Fortaleza, Ceara, Brazil
[2] Univ Fed Piaui, Dept Fis, Campus Minist Petronio Portella, BR-64049550 Teresina, PI, Brazil
关键词
Sodium-cerium molybdate; Temperature dependence; Raman scattering; Isostructural phase transition; HIGH-PRESSURE RAMAN; PHOTOLUMINESCENCE PROPERTIES; PHOTOCATALYTIC PROPERTIES; ACTIVE PHONONS; LUMINESCENCE; REFINEMENT; DEPENDENCE; SCHEELITE;
D O I
10.1016/j.saa.2018.10.017
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Temperature-dependent Raman spectroscopic study has been performed on scheelite-type sodium-cerium molybdate - NaCe(MoO4)(2) - in the temperature range 113-873 K. This study provides phonon properties of NaCe (MoO4)(2), which are very important to understand the mechanism governing eventual phase transitions undergone by the structure, since phonons are very sensitive to structural changes. The ambient scheelite phase remains stable in a low-temperature range (113-293 K), and no relevant modification is observed in the Raman spectra. However, the experiments reveal the existence of one reversible phase transition at high-temperature. The vibrational spectra of NaCe(MoO4)(2) system showed anomalies above 748 K, where overlaps of some bands and the appearance of a band at 458 cm(-1) are observed. These modifications were attributed to an isostructural phase transition and a discussion about the possible mechanism of this transformation is furnished. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:229 / 235
页数:7
相关论文
共 50 条
  • [1] Raman scattering study of the structural phase transition in single crystal KDy(MoO4)2
    Peschanskii, A. V.
    LOW TEMPERATURE PHYSICS, 2017, 43 (11) : 1315 - 1322
  • [2] Raman scattering in the vicinity of the ferroelastic phase transition to the monoclinic phase in KSc(MoO4)2
    Nesterenko, N.M.
    Peschanskii, A.V.
    Fomin, V.I.
    Fizika Nizkikh Temperatur (Kharkov), 2001, 27 (02): : 203 - 209
  • [4] Raman scattering in the vicinity of the ferroelastic phase transition to the monoclinic phase in KSc(MoO4)2
    Nesterenko, NM
    Peschanskii, AV
    Fomin, VI
    LOW TEMPERATURE PHYSICS, 2001, 27 (02) : 148 - 152
  • [5] Unveiling the pressure-induced scheelite to M ′-fergusonite phase transition in NaCe(MoO4)2
    Ferreira, W. C.
    Alabarse, F. G.
    Luz-Lima, C.
    Silva, R. S.
    Olivier, L. S. A.
    Freire, P. T. C.
    Lima Jr, J. A.
    Moura, J. V. B.
    APPLIED PHYSICS LETTERS, 2024, 124 (20)
  • [6] Micro-Raman scattering study of the phase transition of Tb-2(MoO4)(3)
    Sakai, A
    Sakuma, T
    Islam, E
    Onodera, A
    Strukov, BA
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1996, 29 : S490 - S493
  • [7] Micro-Raman scattering study of the ferroelectric phase transition in Tb2(MoO4)3 in the frequency region of MoO4 internal modes
    Islam, E
    Sakai, A
    Onodera, A
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1999, 68 (08) : 2817 - 2824
  • [8] Pressure-induced phase transitions in multiferroic RbFe(MoO4)2-Raman scattering study
    Maczka, M.
    Ptak, M.
    Luz-Lima, C.
    Freire, P. T. C.
    Paraguassu, W.
    Guerini, S.
    Hanuza, J.
    JOURNAL OF SOLID STATE CHEMISTRY, 2011, 184 (10) : 2812 - 2817
  • [9] Temperature-induced phase transition, luminescence and magnetic properties of Eu2(MoO4)3 microcrystal red phosphors
    Tang, Ruofei
    Chen, Huan
    Yin, Wanying
    Li, Yanmei
    Ning, Zhanglei
    Zhong, Cheng
    Zhao, Yan
    Lai, Xin
    Bi, Jian
    Gao, Daojiang
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (08) : 7347 - 7358
  • [10] Temperature-induced phase transition, luminescence and magnetic properties of Eu2(MoO4)3 microcrystal red phosphors
    Ruofei Tang
    Huan Chen
    Wanying Yin
    Yanmei Li
    Zhanglei Ning
    Cheng Zhong
    Yan Zhao
    Xin Lai
    Jian Bi
    Daojiang Gao
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 7347 - 7358