Improved Parameter Extraction Method for GaN HEMT on Si Substrate

被引：0
|
作者：
Jarndal, Anwar [1 ]
Markos, Asdesach Zena [2 ]
Kompa, Guenter [3 ]
机构：
[1] Hodeidah Univ, Dept Comp Engn, Hodeidah 3114, Yemen
[2] Berlin Univ Technol, Microwave Engn Lab, D-10587 Berlin, Germany
[3] Univ Kassel, Dept Microwave Elect, D-34121 Kassel, Germany
来源：
2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | 2010年
关键词：
GaN HEMT; silicon; semiconductor device modeling; genetic optimization; parameter extraction; EQUIVALENT-CIRCUIT; DEVICES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved parasitic elements extraction method applied to GaN on Si devices is presented. Genetic-algorithm based procedure is used to determine a high quality reliable starting values for the extrinsic parameters of proposed small-signal model. Local optimization technique is then used to refine the initial value and find the optimal value for each model element. The validity of the developed method and the proposed small-signal model is verified by comparing simulated small-signal S-parameters with measured ones of a 2-mm (10x200 mu m) GaN HEMT-on-Si.
引用
收藏
页码：1668 / 1671
页数：4
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