Spontaneous emission control in quantum well laser diodes

被引：3
|
作者：
Summers, HD [1 ]
Berry, GM [1 ]
Lewis, GW [1 ]
Blood, P [1 ]
机构：
[1] Univ Wales, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales
来源：
OPTICS EXPRESS | 1998年 / 2卷 / 04期
关键词：
D O I：
10.1364/OE.2.000151
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Spontaneous emission control has been achieved in GaAs/AlGaAs quantum well lasers by the use of Bragg reflectors to define a micro-cavity perpendicular to the quantum wells. The room temperature emission is inhibited whilst below 130K there is an enhancement. These changes to the spontaneous recombination process directly effect the threshold current producing a 25% reduction at room temperature. Theoretical modeling of the lasers is in agreement with the experimental results and highlights the effect of the micro-cavity in altering the overlap of the electro-magnetic field with the quantum well dipole oscillators. (C) 1997 Optical Society of America.
引用
收藏
页码：151 / 156
页数：6
相关论文
共 50 条
  • [1] Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes
    Schonfelder, A
    Ralston, JD
    Czotscher, K
    Weisser, S
    Rosenzweig, J
    Larkins, EC
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) : 582 - 584
  • [2] CONTROL OF SPONTANEOUS EMISSION IN MICROCAVITY LASER-DIODES
    SHORE, KA
    PHYSICA B, 1991, 175 (1-3): : 123 - 126
  • [3] STIMULATED-EMISSION IN QUANTUM WELL LASER-DIODES
    BLOOD, P
    APPLIED PHYSICS LETTERS, 1989, 55 (01) : 1 - 3
  • [4] Spontaneous interlevel emission from quantum dot and quantum well laser structures
    Vorobjev, LE
    Firsov, DA
    Shalygin, VA
    Tulupenko, VN
    Shernyakov, YM
    Egorov, AY
    Zhukov, AE
    Kovsh, AR
    Kop'ev, PS
    Kochnev, IV
    Ledentsov, NN
    Maximov, MV
    Ustinov, VM
    Alferov, ZI
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS, 1999, 297-2 : 189 - 196
  • [5] Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser
    Ning, YQ
    Sung, YF
    Jin, ZH
    Wang, LJ
    OPTOELECTRONIC DEVICES AND INTEGRATION, PTS 1 AND 2, 2005, 5644 : 614 - 619
  • [6] LINEWIDTH OF SPONTANEOUS EMISSION IN LASER-DIODES
    VANCONG, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : K69 - K72
  • [7] Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes
    Arif, Ronald A.
    Zhao, Hongping
    Ee, Yik-Khoon
    Tansu, Nelson
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (5-6) : 573 - 580
  • [8] Electroluminescent diodes with microcavity for spontaneous emission control
    Nelep, K
    Sagnes, I
    Kazmierski, C
    Bourdon, G
    Robert, I
    Abram, I
    JOURNAL DE PHYSIQUE IV, 2000, 10 (P8): : 123 - 124
  • [9] GaSbBi/GaSb quantum well laser diodes
    Delorme, O.
    Cerutti, L.
    Luna, E.
    Narcy, G.
    Trampert, A.
    Tournie, E.
    Rodriguez, J. -B.
    APPLIED PHYSICS LETTERS, 2017, 110 (22)
  • [10] TEMPERATURE DEPENDENCE OF LINEWIDTH OF SPONTANEOUS EMISSION IN LASER DIODES
    CHAKRAVARTI, AN
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1968, 6 (01) : 47 - +
12345