Influence of surface treatment and interface layers on electrical spin injection efficiency and transport in InAs

被引:4
|
作者
Zhu, L. [1 ]
Yua, E. T. [1 ]
机构
[1] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 06期
关键词
ORBIT INTERACTION; INVERSION-LAYERS; QUANTUM-WELLS; PASSIVATION; PRECESSION;
D O I
10.1116/1.3502674
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spin-valve, weak localization/antilocalization, and scanned probe microscopy measurements are used to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs at 4.2 K. An electrically insulating barrier layer is found to be required to achieve nonzero spin injection efficiency, with a 3 nm Al2O3 electrically insulating barrier providing a spin injection efficiency of 5 +/- 2%. Conductive atomic force microscopy suggests that localized leakage through the InAs native oxide is sufficient to suppress spin-polarized current injection in the absence of a more highly insulating barrier layer. Spin scattering lengths are determined experimentally from both weak localization/antilocalization and spin-valve measurements. Spin and elastic scattering lengths of 230 +/- 20 and 85 +/- 5 nm, respectively, are measured, with a sulfur-based surface treatment increasing the spin scattering length to 250 +/- 20 nm and decreasing the elastic scattering length to 65 +/- 5 nm. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3502674]
引用
收藏
页码:1164 / 1168
页数:5
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