Copper iodide thin films as a p-type electrical conductivity in dye-sensitized p-Cui|dye|n-TiO2 heterojunction solid state solar cells

The transparent semiconducting copper iodide (CuI) films were deposited by pulsed laser deposition (PLD) and their structural and optoelectrical properties in the power output of TiO2 vertical bar Dye vertical bar CuI cells are reported. These CuI films exhibited optical transmittance of over 80% in the wavelength range from 400 to 900 nm and a minimum resistivity of about 2 K Omega-cm. An efficient charge generation is observed through the illumination of the TiO2 layer of the fabricated p-CuI vertical bar Dye vertical bar n-TiO2 cells. The cells performances have been given in the current-voltage (I-V) working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm(2), 25 degrees C). The maximum short circuit photo current density (J(sc)) of about 12.2 mA/cm(2) and open circuit photo voltage (V-oc) of about 480 mV were obtained for the TiO2 vertical bar Dye vertical bar CuI cells with good reproducibility. The fill factor (FF) and power conversion efficiency (eta) were about 47.8% and 2.8%, respectively.