Scanning electrochemical microscopy as an etching tool for ITO patterning

被引:8
|
作者
Grisotto, Federico [1 ]
Metaye, Roamin [1 ]
Jousselme, Bruno [1 ]
Geffroy, Bernard [1 ,2 ]
Palacin, Serge [1 ]
Charlier, Julienne [1 ]
机构
[1] CEA IRAMIS SPCSI, F-91191 Gif Sur Yvette, France
[2] Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France
关键词
INDIUM-TIN OXIDE; POLY(TETRAFLUOROETHYLENE) SURFACES; GRAFT-COPOLYMERIZATION; HALOGENATED POLYMERS; VINYLIC MONOMERS; FEEDBACK MODE; TRANSPARENT; SILICON; LAYER; MINERALIZATION;
D O I
10.1039/c1jm12858b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This work presents a new patterning technique of Indium Tin Oxide (ITO) thin films using the microelectrode of a Scanning Electrochemical Microscope (SECM). With the development of new display technologies, patterned indium tin oxide (ITO) films have enormous growth potential and can find applications in any device that requires transparent and conductive electrodes. To optimize the performances of such devices, a clean patterning technique providing straight sidewalls and control of surface chemistry and physical properties is needed. We report here a simple and one-step patterning technique of ITO using scanning electrochemical microscopy as a soft etching tool. This electrochemical wet-lithographic technique provides a fast and low cost patterning process and is performed in an aqueous acid electrolytic solution. This maskless technique leads to a clean etching with straight walls and no redeposition of the ablated part. The subjacent substrate (glass or polymer) is not damaged by this technique and the electrical and/or optical properties of the remaining ITO film are preserved.
引用
收藏
页码:15962 / 15968
页数:7
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