Chemical composition of nitrogen-oxygen shallow donor complexes in silicon

被引：7

作者：

Alt, H. Ch. ^{[1
]}

Wagner, H. E. ^{[1
]}

von Ammon, W. ^{[2
]}

Bittersberger, F. ^{[2
]}

Huber, A. ^{[2
]}

Koester, L. ^{[2
]}

机构：

[1] Munich Univ Appl Sci, Dept Engn Phys, D-80001 Munich, Germany

[2] Siltron AG, D-81737 Munich, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷 / 130-133期

关键词：

silicon; nitrogen-oxygen complexes; shallow donors; FTIR;

D O I：

10.1016/j.physb.2007.08.129

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

FTIR absorption measurements have been carried out on shallow donor transitions in silicon related to (N, O)-complexes. Growth of a nitrogen-doped float-zone ingot with an axial variation of the interstitial oxygen concentration from < 10(16) up to 6 x 10(17) cm(-3) allowed systematic investigation of the defect formation driven by mass-action laws. The energetically deepest shallow donor of the (N, O)-family has the composition NO. Other species contain up to three oxygen atoms. implications of the results on the microscopic structure of (N, O)-related shallow donors are discussed. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：130 / 133

页数：4

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