Synthesis and gas sensing properties of palladium-doped indium oxide microstructures for enhanced hydrogen detection

被引:18
|
作者
Chen, Lin [1 ,3 ]
He, Xiaoyan [2 ]
Liang, Yanfei [2 ]
Sun, Yongjiao [2 ]
Zhao, Zhengting [2 ]
Hu, Jie [2 ]
机构
[1] Taiyuan Univ Technol, Key Lab Interface Sci & Engn Adv Mat, Minist Educ, Taiyuan 030024, Peoples R China
[2] Taiyuan Univ Technol, Coll Informat Engn, Mcro & Nano Syst Res Ctr, Taiyuan 030024, Shanxi, Peoples R China
[3] Taiyuan Univ Technol, Res Ctr Adv Mat Sci & Technol, Taiyuan 030024, Peoples R China
基金
中国国家自然科学基金; 山西省青年科学基金;
关键词
IN2O3; PD; SENSOR; NANOPARTICLES;
D O I
10.1007/s10854-016-5257-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the pure In2O3 and Pd-doped In2O3 (0.5, 1.0, 2.0 and 4.0 mol%) flower-like spherical microstructures have been synthesized by a hydrothermal method. The crystal structure and surface morphology of as-prepared samples were characterized by X-ray diffraction and scanning electron microscopy. The gas sensing experiments were carried out on all the as-prepared gas sensors to hydrogen gas, and the measured results demonstrated that the Pd-doped In2O3 gas sensors exhibit enhanced gas sensing performance under the optimal working temperature of 210 A degrees C. Especially, the 1.0 mol% Pd-doped In2O3 sensor shows the highest response to 100 ppm hydrogen gas at 210 A degrees C, which was almost two times higher than that of pure one. Furthermore, the 1.0 mol% Pd-doped In2O3 gas sensor also shows fast response/recovery time about 4 and 7 s, respectively. Finally, the gas sensing mechanism was also discussed on the pure and Pd-doped In2O3 gas sensors.
引用
收藏
页码:11331 / 11338
页数:8
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