Electrooptical properties of DC electroluminescent ZnS:Mn,Cu powder panels with chalcogenide glass intermediate layer

被引：0

作者：

Mateleshko, N. ^{[1
]}

Mitsa, V. ^{[1
]}

Sikora, S. ^{[1
]}

机构：

[1] Uzhgorod State Univ, Dept Solid State Elect, UA-88000 Uzhgorod, Ukraine

来源：

CHALCOGENIDE LETTERS | 2007年 / 4卷 / 06期

关键词：

electroluminescence; powder ZnS (Mn; Cu); thick film; chalcogenide glasses;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Introducing of amorphous ( a) a- As2Se3 as contrasting intermediate layer into SnO2-As2Se3-ZnS(Mn, Cu)-Al structure allows one to increase by about 50% a light contrast range of the device that facilitates the perception of symbol-alphabetic information. The bleaching of a-As2Se3 film under the action of humidity allows one to control the state of the structure air-tightness. The absorption edge of As-Se films and electrooptical characteristics of SnO2-ZnS( Mn, Cu)-Al active structure have been investigated.

引用

页码：65 / 68

页数：4

共 30 条

[1] Electrooptical properties of DC electroluminescent ZnS:Mn,Cu powder panels with chalcogenide glass intermediate layer
Mateleshko, N
Mitsa, V
Sikora, S
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PROCEEDINGS OF THE SID, 1981, 22 (04): : 254 - 262
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[6] DC CHARACTERISTICS OF ELECTROLUMINESCENT EVAPORATED ZNS-MN, CU, CL FILMS
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