Strained Si1-xGex-on-Insulator PMOS FinFETs with Excellent Sub-Threshold Leakage, Extremely-High Short-Channel Performance and Source Injection Velocity for 10nm Node and Beyond

被引：0

作者：

Hashemi, Pouya ^{[1
]}

Balakrishnan, Karthik ^{[1
]}

Majumdar, Amlan ^{[1
]}

Khakifirooz, Ali ^{[3
]}

Kim, Wanki ^{[1
]}

Baraskar, Ashish ^{[2
]}

Yang, Li A. ^{[2
]}

Chan, Kevin ^{[1
]}

Engelmann, Sebastian U. ^{[1
]}

Ott, John A. ^{[1
]}

Antoniadis, Dimitri A. ^{[4
]}

Leobandung, Effendi ^{[1
]}

Park, Dae-Gyu ^{[1
]}

机构：

[1] IBM Res, Yorktown Hts, NY 10598 USA

[2] GLOBALFOUNDRIES, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] IBM Res, Albany, NY 12203 USA

[4] MIT, Cambridge, MA 02139 USA

来源：

2014 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI-TECHNOLOGY): DIGEST OF TECHNICAL PAPERS | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate high performance (HP) s-SiGe pMOS finFETs with I-on/I-eff of similar to 1.05/0.52mA/mu m and similar to 1.3/0.71mA/mu m at I-off=100nA/mu m at V-DD=0.8 and 1V, extremely high intrinsic performance and source injection velocity. Compared to earlier work, an optimized process flow and a novel interface passivation scheme, result in similar to 30% mobility enhancement and dramatic sub-threshold-swing reduction to 65mV/dec. We also demonstrate the most aggressively scaled s-SiGe finFET reported to date, with W-FIN similar to 8nm and L-G similar to 15nm, while maintaining high current drive and low leakage. With their very low GIDL-limited I-D, (min) and more manufacturing-friendly process compared to high-Ge content SiGe devices, as well as impressive I-on similar to 0.42mA/mu m at I-off = 100nA/mu m and g(m), (int) as high as 2.4mS/mu m at V-DD=0.5V, s-SiGe finFETs are strong candidates for future HP and low-power applications.

引用

页数：2