Effect of growth temperature on gallium nitride nanostructures using HVPE technique

被引：5

作者：

Basha, S. Munawar ^{[1
]}

Ryu, S. R. ^{[2
]}

Kang, T. W. ^{[2
]}

Srivastava, O. N. ^{[3
]}

Ramakrishnan, V. ^{[4
]}

Kumar, J. ^{[1
]}

机构：

[1] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India

[2] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul, South Korea

[3] Banaras Hindu Univ, Varanasi 221005, Uttar Pradesh, India

[4] Madurai Kamaraj Univ, Dept Laser Studies, Madurai 625021, Tamil Nadu, India

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2012年 / 44卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

RAMAN-SCATTERING; GAN;

D O I：

10.1016/j.physe.2012.05.014

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth of hexagonal wurzite one dimensional (1D) gallium nitride (GaN) nanostructures on sapphire substrates using hydride vapor phase epitaxy (HVPE) process was carried out at two different temperatures (973 K and 11323 K). The GaN nanoneedles were formed at 973 K and hexagonal nanorods get formed at 1023 K. The morphologies of these nanostructures were studied using high resolution scanning electron microscope. X-ray diffraction and micro-Raman spectroscopy measurements confirmed that the as grown GaN nanostructures are of hexagonal wurtzite structure without any oxide phase. The emission properties of these nanostructures have been investigated using photoluminescence. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1885 / 1888

页数：4

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