Synchrotron radiation photoemission studies of surface reconstruction on GaAs(001)

被引：0

作者：

Ono, K ^{[1
]}

Mano, T ^{[1
]}

Nakamura, K ^{[1
]}

Mizuguchi, M ^{[1
]}

Nakazono, S ^{[1
]}

Horiba, K ^{[1
]}

Kihara, T ^{[1
]}

Kiwata, H ^{[1
]}

Waki, I ^{[1
]}

Oshima, M ^{[1
]}

Koguchi, N ^{[1
]}

Kakizaki, A ^{[1
]}

机构：

[1] Univ Tokyo, Grad Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface core level shifts of (2 x 4), c(4 x 4), and (4 x 6) reconstructured GaAs(001) surfaces, which were prepared in optimized molecular beam epitaxy growth conditions, have been investigated by in situ synchrotron radiation high-resolution photoemission. The numbers of chemically inequivalent Ga and As surface sites were determined from the curve-fitting results of the high-resolution core level photoemission spectra.

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页码：293 / 294

页数：2

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