Electroless Deposition for New Challenges in Nanoelectronics and Microelectronics

被引:0
|
作者
Khoperia, T. [1 ]
机构
[1] Iv Javakhishvili Tbilisi State Univ, E Andronikashvili Inst Phys, GE-0177 Tbilisi, Georgia
来源
关键词
D O I
10.1149/1.3640399
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The proposed patentable nanomethod is much more advantageous and simpler than other expensive and complicated methods such as e-beam and X-ray lithography or fabrication of nano-sized elements by light phase shift photomasks. The proposed method allows us to eliminate surface treatment by e-beam. It can save about $4 000 000 (the price of e-beam lithography exposure equipment). It also eliminates the application of X-ray masks with gold masking elements. The proposed patentable nanomethods for the first time allow one to produce nano-sized adjacent elements of different thickness made of various materials (e.g. Si) by single optical UV photolithography. These advantages significantly extend the functional capabilities of the devices and simplify the removal of undesirable gases and heat dissipation.
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页码:1 / 10
页数:10
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