Characterization of Ge-Bi-S glass by thermal, electrical, switching and optical measurements

A study of the synthesized Ge22.5Bi7S70.5 glassy system has been carried out. Differential thermal analysis data indicate the retention in the as-quenched sample of two amorphous phases. Thermal conductivity, psi, measurements on bulk sample reveal that the main contribution to psi is due to phonon thermal conductivity. Thermal evaporation of the synthesized ingot gives films with Ge20.7Bi6.8S72.5 as composition. The values of the activation energy and the pre-exponential factor calculated from the direct current electrical conductivity above 53 degrees C suggest that carrier conduction occurred between extended states in these films. The I-V characteristics in the off-state and the switching phenomenon are investigated. A memory switch with a threshold voltage decreasing with temperature is detected for the studied films. Optical parameters such as absorption coefficient, optical gap and refractive index are also determined. Comparison with binary Ge-S glass reveals that the addition of Bi introduces additional absorbing states at band edges. (C) 1998 Kluwer Academic Publishers.