Oxygen-Vacancy-Related Dielectric Relaxation and Electric Conduction in KNbO3 Ceramic

被引：4
|
作者：
Singh, Gurvinderjit [1 ]
Tiwari, V. S. [1 ]
Gupta, P. K. [1 ]
机构：
[1] Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
来源：
INTEGRATED FERROELECTRICS | 2010年 / 117卷
关键词：
KNbO3; Dielectric permittivity; Impedance spectroscopy; Oxygen defects; FREQUENCY;
D O I：
10.1080/10584587.2010.489416
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The temperature and frequency dependent dielectric and conductivity properties were measured on as-sintered as well as oxygen annealed KNbO3 ceramics. The results show that in addition to phase transition peaks, well defined relaxation peaks are observed in the temperature range 450-700 K. These peaks could be suppressed by annealing the samples in the oxygen atmosphere. The dc-conductivity and maximum dielectric constant values decreases after oxygen annealing. The results are explained on the basis of defect concentration and their dynamics.
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收藏
页码：1 / 10
页数：10
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