Back-illuminated pulse-frequency-modulated photosensor using silicon-on-sapphire technology developed for use as epi-retinal prosthesis device

被引:15
|
作者
Uehara, A
Kagawa, K
Tokuda, T
Ohta, J
Nunoshita, M
机构
[1] NIDEK Co Ltd, Gamagori, Aichi 4430036, Japan
[2] Nara Inst Sci & Technol, Ikoma, Nara 6300101, Japan
关键词
D O I
10.1049/el:20030742
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An intra-ocular epi-retinal prosthesis device using a back-illuminated photosensor is proposed and demonstrated for the first time. The photosensor, based on a pulse frequency modulation, is fabricated on a transparent sapphire substrate to detect the backside incident light. Experimental results show that the device is sensitive over a dynamic range of incident light of 30 dB.
引用
收藏
页码:1102 / 1104
页数:3
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