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Bulk superconducting gap of V3Si studied by low-energy ultrahigh-resolution photoemission spectroscopy
被引:1
|作者:
Sato, T.
[1
]
Souma, S.
[2
]
Nakayama, K.
[1
]
Sugawara, K.
[2
]
Toyota, N.
[1
]
Takahashi, T.
[1
,2
]
机构:
[1] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
[2] Tohoku Univ, Adv Inst Mat Res, WPI Res Ctr, Sendai, Miyagi 9808577, Japan
关键词:
Photoemission spectroscopy;
Low-T-c superconductor;
A15;
compounds;
SCATTERING;
STATES;
NB3AL;
MGB2;
LEAD;
D O I:
10.1016/j.elspec.2015.04.009
中图分类号:
O433 [光谱学];
学科分类号:
0703 ;
070302 ;
摘要:
We have performed low-energy ultrahigh-resolution photoemission spectroscopy (PES) of A15 compound V3Si with a xenon-plasma discharge lamp to elucidate the bulk superconducting gap. Below the superconducting transition temperature (T-c =15.9 K), we found a sharp quasiparticle peak at the Fermi level in the PES spectrum. The gap spectrum is well fitted by a single s-wave superconducting-gap function together with a dip structure at similar to 30 meV suggestive of a strong electron-phonon coupling. The anomalous in-gap state previously observed in the PES measurement with high-energy photons is absent or negligibly small in the present bulk-sensitive measurement. The present PES result shows that V3Si is a single-gap s-wave superconductor. (C) 2015 Elsevier B.V. All rights reserved.
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页码:40 / 42
页数:3
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