Bulk superconducting gap of V3Si studied by low-energy ultrahigh-resolution photoemission spectroscopy

被引:1
|
作者
Sato, T. [1 ]
Souma, S. [2 ]
Nakayama, K. [1 ]
Sugawara, K. [2 ]
Toyota, N. [1 ]
Takahashi, T. [1 ,2 ]
机构
[1] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
[2] Tohoku Univ, Adv Inst Mat Res, WPI Res Ctr, Sendai, Miyagi 9808577, Japan
关键词
Photoemission spectroscopy; Low-T-c superconductor; A15; compounds; SCATTERING; STATES; NB3AL; MGB2; LEAD;
D O I
10.1016/j.elspec.2015.04.009
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
We have performed low-energy ultrahigh-resolution photoemission spectroscopy (PES) of A15 compound V3Si with a xenon-plasma discharge lamp to elucidate the bulk superconducting gap. Below the superconducting transition temperature (T-c =15.9 K), we found a sharp quasiparticle peak at the Fermi level in the PES spectrum. The gap spectrum is well fitted by a single s-wave superconducting-gap function together with a dip structure at similar to 30 meV suggestive of a strong electron-phonon coupling. The anomalous in-gap state previously observed in the PES measurement with high-energy photons is absent or negligibly small in the present bulk-sensitive measurement. The present PES result shows that V3Si is a single-gap s-wave superconductor. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:40 / 42
页数:3
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