AFM local oxidation nanopatterning of a high mobility shallow 2D hole gas

被引：31
|
作者：
Rokhinson, LP
Tsui, DC
Pfeiffer, LN
West, KW
机构：
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2002年 / 32卷 / 2-3期
关键词：
GaAs/AlGaAs shallow hole gas; quantum point contact; AFM lithography;
D O I：
10.1016/S0749-6036(02)00120-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The recently developed AFM local anodic oxidation (LAO) technique offers a convenient way of patterning nanodevices, but imposes even more stringent requirements on the underlying quantum well structure. We developed a new very shallow quantum well design which allows the depth and density of the 2D gas to be independently controlled during the growth. A high mobility (0.5 x 10(6) cm(2) V-1 s(-1) at 4.2 K) 2D hole gas just 350 Angstrom below the surface is demonstrated. A quantum point contact, fabricated by AFM LAO nanopatterning from this wafer, shows nine quantum steps at 50 mK. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：99 / 102
页数：4
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