Effect of KrF excimer laser irradiation on the properties of ZnO thin films

被引:34
|
作者
Zhao, Yan [1 ]
Jiang, Yijian [1 ]
机构
[1] Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2931005
中图分类号
O59 [应用物理学];
学科分类号
摘要
At room temperature, the effect of KrF pulsed excimer laser irradiation on the structural, photoluminescence, and electrical properties and on the surface morphology of ZnO thin films under different laser energy densities was investigated. Compared to the as grown sample, at an irradiation energy density of about 450 mJ/cm(2), the ZnO thin film exhibits a series of desirable properties: UV emission is distinctly higher, resistivity is decreased by three orders of magnitude, and the surface is flat and smooth and, at the same time, it maintains a good epitaxial orientation and a wurtzite crystal lattice structure. UV emission enhancement after laser irradiation is discussed in detail. It is suggested that the mechanism responsible for the UV enhancement is the increase in donors and not the improvement in the crystalline quality. (C) 2008 American Institute of Physics.
引用
收藏
页数:4
相关论文
共 50 条
  • [2] Effect of KrF excimer laser irradiation on the surface changes and photoelectric properties of ZnO single crystal
    Zeng, Yong
    Zhao, Yan
    Jiang, Yijian
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 671 : 579 - 584
  • [3] Crystallization of amorphous lead titanate thin films by the irradiation of KrF excimer laser
    Xiong, SB
    Ye, ZM
    Liu, JM
    Li, AD
    Lin, CY
    Chen, XY
    Guo, XL
    Liu, ZG
    [J]. APPLIED SURFACE SCIENCE, 1997, 109 : 124 - 127
  • [4] KrF excimer laser crystallization of silicon thin films
    Summers, SD
    Reehal, HS
    Hirst, GJ
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2000, 11 (07) : 557 - 563
  • [5] KrF excimer laser crystallization of silicon thin films
    S. D. Summers
    H. S. Reehal
    G. J. Hirst
    [J]. Journal of Materials Science: Materials in Electronics, 2000, 11 : 557 - 563
  • [6] Rapid-melt-mediated recrystallization of ZnO thin films grown at low temperature by using KrF excimer laser irradiation
    Min-Suk Oh
    Inseok Seo
    [J]. Journal of the Korean Physical Society, 2015, 67 : 1778 - 1782
  • [7] Rapid-melt-mediated recrystallization of ZnO thin films grown at low temperature by using KrF excimer laser irradiation
    Oh, Min-Suk
    Seo, Inseok
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 67 (10) : 1778 - 1782
  • [8] The effect of laser irradiation on ZnO thin films
    Zhao Yan
    Jiang Yi-Jian
    [J]. ACTA PHYSICA SINICA, 2010, 59 (04) : 2679 - 2684
  • [9] Improved Structural and Electrical Properties of ZnO-Based Thin Film Transistors by Using Pulsed KrF Excimer Laser Irradiation
    Min-Suk Oh
    R. Nirmala
    R. Navamathavan
    [J]. Journal of Electronic Materials, 2019, 48 : 3137 - 3144
  • [10] Improved Structural and Electrical Properties of ZnO-Based Thin Film Transistors by Using Pulsed KrF Excimer Laser Irradiation
    Oh, Min-Suk
    Nirmala, R.
    Navamathavan, R.
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (05) : 3137 - 3144