N-conducting, ferromagnetic Mn-doped ZnO thin films on sapphire substrates

被引：0

作者：

Schmidt, H ^{[1
]}

Diaconu, M ^{[1
]}

Guzman, E ^{[1
]}

Hochmuth, H ^{[1
]}

Lorenz, M ^{[1
]}

Benndorf, G ^{[1
]}

Setzer, A ^{[1
]}

Esquinazi, P ^{[1
]}

Von Wenckstern, H ^{[1
]}

Spemann, D ^{[1
]}

Pöppl, A ^{[1
]}

Böttcher, R ^{[1
]}

Grundmann, M ^{[1
]}

机构：

[1] Univ Leipzig, Fak Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ferromagnetic Mn-doped ZnO films have been grown by pulsed laser deposition (PLD) on c-plane sapphire substrates. The room temperature saturation magnetization of 1 mu m thick Zn1-xMnxO films with x=0.090, 0.065, and 0.018 amounts to 0.033, 0.013, and 0.003 emu-g(-1), respectively. We find a clear correlation between the coercive field and the grain size in the ferromagnetic Mn-doped ZnO films that can be explained on the basis of a mechanism known from soft magnetic materials.

引用

页码：351 / 352

页数：2

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