Quality assessment of thin oxides using constant and ramped stress measurements

被引：2

作者：

Diestel, G ^{[1
]}

Martin, A ^{[1
]}

Kerber, M ^{[1
]}

Schlemm, A ^{[1
]}

Erlenmaier, H ^{[1
]}

Murr, B ^{[1
]}

Preussger, A ^{[1
]}

机构：

[1] Infineon Technol AG, Reliabil Methodol, D-81739 Munich, Germany

来源：

MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 07期

关键词：

Electric current measurement - Oxides - Stress analysis - Voltage measurement;

D O I：

10.1016/S0026-2714(01)00061-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two methods are proposed for obtaining extrinsic oxide lifetime data using fast ramped tests. It is shown that the intersection point between the extrinsic and intrinsic branches of a Weibull plot coincides for ramped and constant stress tests. This is the basis of our fast qualification approach, where intrinsic data are obtained by constant voltage stress and extrinsic data are cumulated with a fast ramped test. The correctness of our approaches is supported by constant voltage and exponentially ramped current measurements. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1019 / 1022

页数：4

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