GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

被引：2
|
作者：
Egorov, AY [1 ]
Zhukov, AE [1 ]
Kovsh, AR [1 ]
Ustinov, VM [1 ]
Mamutin, VV [1 ]
Ivanov, SV [1 ]
Zhmerik, VN [1 ]
Tsatsul'nikov, AF [1 ]
Bedarev, DA [1 ]
Kop'ev, PS [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia
来源：
TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 12期
关键词：
Nitrogen; Radiation; GaAs; Molecular Beam Epitaxy; Molecular Beam;
D O I：
10.1134/1.1262326
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs heterostructures, and the influence of the growth regimes on their characteristics was studied. It is shown that implantation of nitrogen causes a substantial long-wavelength shift of the radiation. The possibility of obtaining 1.4 mu m radiation at room temperature was demonstrated using In0.28Ga0.72As0.97N0.03/GaAs quantum wells. (C) 1998 American Institute of Physics. [S1063-7850(98)01512-2].
引用
收藏
页码：942 / 944
页数：3
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