Thermopower Study of GaN-Based Materials for Next-Generation Thermoelectric Devices and Applications

被引：43

作者：

Hurwitz, Elisa N. ^{[1
]}

Asghar, Muhammad ^{[3
]}

Melton, Andrew ^{[4
]}

Kucukgok, Bahadir ^{[5
]}

Su, Liqin ^{[1
]}

Orocz, Mateusz ^{[1
]}

Jamil, Muhammad ^{[4
]}

Lu, Na ^{[2
]}

Ferguson, Ian T. ^{[1
]}

机构：

[1] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA

[2] Univ N Carolina, Dept Engn Technol, Sustainable Mat & Renewable Technol SMART Lab, Charlotte, NC 28223 USA

[3] Islamia Univ Bahawalpur, Dept Phys, Bahawalpur 63100, Pakistan

[4] Georgia Inst Technol, Dept Elect & Comp Engn, Atlanta, GA 30332 USA

[5] Univ N Carolina, Dept Phys & Opt Sci, Charlotte, NC 28223 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 05期

关键词：

Thermoelectrics; III-nitrides; Seebeck; GaN; InGaN; GaN:Gd; MOCVD; thermopower; FREESTANDING GAN;

D O I：

10.1007/s11664-010-1416-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

III-nitride InGaN-based solar cells have gained importance because their band gap can potentially cover most of the solar spectrum, spanning 0.7 eV to 3.4 eV. However, to use these materials to harvest additional energy, other properties such as their thermoelectric properties should be exploited. In this work, the Seebeck coefficient and the electrical conductivity of three InGaN alloys with various indium concentrations and Gd-doped GaN (GaN:Gd) were measured, and the power factor was calculated. We report a Seebeck value of similar to 209 mu V/K for Gd-doped GaN.

引用

页码：513 / 517

页数：5

共 50 条

[1] Thermopower Study of GaN-Based Materials for Next-Generation Thermoelectric Devices and Applications
Elisa N. Hurwitz
Muhammad Asghar
Andrew Melton
Bahadir Kucukgok
Liqin Su
Mateusz Orocz
Muhammad Jamil
Na Lu
Ian T. Ferguson
Journal of Electronic Materials, 2011, 40 : 513 - 517
[2] Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display
Zhou Wang
Xinyi Shan
Xugao Cui
Pengfei Tian
Journal of Semiconductors, 2020, 41 (04) : 81 - 86
[3] Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display
Wang, Zhou
Shan, Xinyi
Cui, Xugao
Tian, Pengfei
JOURNAL OF SEMICONDUCTORS, 2020, 41 (04)
[4] Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display
Zhou Wang
Xinyi Shan
Xugao Cui
Pengfei Tian
Journal of Semiconductors, 2020, (04) : 81 - 86
[5] Next-Generation Quantum Materials for Thermoelectric Energy Conversion
Singh, Shiva Kumar
Munevar, Julian
Mendonca-Ferreira, Leticie
Avila, Marcos A. A.
CRYSTALS, 2023, 13 (07)
[6] Progress in GaN-based materials and optical devices
Melngailis, I
ADVANCED OPTICAL DEVICES, TECHNOLOGIES, AND MEDICAL APPLICATIONS, 2002, 5123 : 231 - 237
[7] GaN-based substrates and optoelectronic materials and devices
Guoyi Zhang
Bo Shen
Zhizhong Chen
Xiaodong Hu
Zhixin Qin
Xinqiang Wang
Jiejun Wu
Tongjun Yu
Xiangning Kang
Xingxing Fu
Wei Yang
Zhijian Yang
Zhizhao Gan
Science Bulletin, 2014, (12) : 1201 - 1218
[8] Renovation of Power Devices by GaN-based Materials
Ueda, Daisuke
2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2015,
[9] GaN-based substrates and optoelectronic materials and devices
Zhang, Guoyi
Shen, Bo
Chen, Zhizhong
Hu, Xiaodong
Qin, Zhixin
Wang, Xinqiang
Wu, Jiejun
Yu, Tongjun
Kang, Xiangning
Fu, Xingxing
Yang, Wei
Yang, Zhijian
Gan, Zhizhao
CHINESE SCIENCE BULLETIN, 2014, 59 (12): : 1201 - 1218
[10] Generation-recombination noise in GaN and GaN-based devices
Pala, N
Rumyantsev, SL
Shur, MS
Levinshtein, ME
Khan, MA
Simin, G
Gaska, R
NOISE IN DEVICES AND CIRCUITS, 2003, 5113 : 217 - 231

← 1 2 3 4 5 →