Graphene-like conjugated π bond system in Pb1-xSnxSe

被引:6
|
作者
Shu, G. J. [1 ]
Liou, S. C. [2 ]
Karna, S. [1 ]
Sankar, R. [1 ]
Hayashi, M. [1 ]
Chu, M. -W. [1 ]
Chou, F. C. [1 ,3 ,4 ]
机构
[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan
[2] Univ Maryland, Nano Ctr, NISP Lab, College Pk, MD 20742 USA
[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
[4] Minist Sci & Technol, Taiwan Consortium Emergent Crystalline Mat, Taipei 10622, Taiwan
关键词
MAXIMUM-ENTROPY;
D O I
10.1063/1.4915611
中图分类号
O59 [应用物理学];
学科分类号
摘要
Following the identification of the pi bond in graphene, in this work, a pi bond constructed through side-to-side overlap of half-filled 6p(z) orbitals was observed in a non-carbon crystal of Pb1-xSnxSe (x similar to 0.34) (PSS), a prototype topological crystalline insulator and thermoelectric material with a high figure-of-merit. PSS compounds with a rock-salt type cubic crystal structure were found to consist of sigma bond connected covalent chains of Pb(Sn)-Se with an additional pi bond that is shared as a conjugated system among the four nearest neighbor Pb pairs in square symmetry within all {001} monoatomic layers per cubic unit cell. The pi bond formed with half-filled 6p(z) orbitals between Pb atoms is consistent with the calculated results from quantum chemistry. The presence of pi bonds was identified and verified with electron energy-loss spectroscopy through plasmonic excitations and electron density mapping via an inverse Fourier transform of X-ray diffraction. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] ELECTROLYTIC POLISH FOR PB1-XSNXSE
    QADEER, A
    REED, J
    BRYANT, FJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2145 - 2146
  • [2] PHASE-TRANSITIONS IN PB1-XSNXSE
    BRATASHEVSKY, YA
    PROZOROVSKY, VD
    RESHIDOVA, IY
    PYREGOV, BP
    [J]. UKRAINSKII FIZICHESKII ZHURNAL, 1986, 31 (03): : 398 - 399
  • [3] STRUCTURE AND PROPERTIES OF PB1-XSNXSE FILMS
    MIKOLAICHUK, AG
    FREIK, DM
    BRODIN, II
    VOITKIV, VV
    PERKATYUK, II
    [J]. INORGANIC MATERIALS, 1976, 12 (10) : 1458 - 1460
  • [4] PHASE STUDIES OF PB1-XSNXSE ALLOYS
    WOOLLEY, JC
    BEROLO, O
    [J]. MATERIALS RESEARCH BULLETIN, 1968, 3 (05) : 445 - &
  • [5] LOW-TEMPERATURE STRUCTURAL TRANSFORMATIONS IN THE PB1-XSNXSE SYSTEM
    IVANOV, VI
    SHEKHTMAN, VS
    SHMYTKO, IM
    [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1984, 40 : C139 - C139
  • [6] EPITAXIAL LAYERS OF PB1-XSNXTE AND PB1-XSNXSE
    SHOTOV, AP
    DAVARASHVILI, OI
    [J]. INORGANIC MATERIALS, 1977, 13 (04) : 501 - 503
  • [7] Topological crystalline insulator states in Pb1-xSnxSe
    Dziawa, P.
    Kowalski, B. J.
    Dybko, K.
    Buczko, R.
    Szczerbakow, A.
    Szot, M.
    Lusakowska, E.
    Balasubramanian, T.
    Wojek, B. M.
    Berntsen, M. H.
    Tjernberg, O.
    Story, T.
    [J]. NATURE MATERIALS, 2012, 11 (12) : 1023 - 1027
  • [8] Photodiodes based on Pb1-xSnxSe epitaxial films
    Jalilova, Ch. D.
    Aliyev, A. A.
    Faradjev, N. V.
    Alekperova, Sh. M.
    [J]. 19TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, 2007, 6636
  • [9] ELECTRICAL PROPERTIES OF PB1-XSNXSE SEMICONDUCTING ALLOYS
    HOFF, GF
    DIXON, JR
    [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (05) : 433 - &
  • [10] INVESTIGATION OF PLASMA REFLECTION IN PB1-XSNXSE SOLID-SOLUTION SYSTEM
    KUCHERENKO, IV
    MITYAGIN, YA
    VODOPYANOV, LK
    SHOTOV, AP
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (03): : 282 - 284