Optically induced Lifshitz transition in bilayer graphene

被引:35
|
作者
Iorsh, I. V. [1 ]
Dini, K. [2 ]
Kibis, O. V. [3 ]
Shelykh, I. A. [1 ,2 ]
机构
[1] ITMO Univ, St Petersburg 197101, Russia
[2] Univ Iceland, Sci Inst, Dunhagi 3, IS-107 Reykjavik, Iceland
[3] Novosibirsk State Tech Univ, Dept Appl & Theoret Phys, Karl Marx Ave 20, Novosibirsk 630073, Russia
基金
俄罗斯基础研究基金会;
关键词
ELECTRONIC TRANSPORT;
D O I
10.1103/PhysRevB.96.155432
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
It is shown theoretically that the renormalization of the electron energy spectrum of bilayer graphene with a strong high-frequency electromagnetic field (dressing field) results in the Lifshitz transition-the abrupt change in the topology of the Fermi surface near the band edge. This effect substantially depends on the polarization of the field: The linearly polarized dressing field induces the Lifshitz transition from the quadruply connected Fermi surface to the doubly connected one, whereas the circularly polarized field induces the multicritical point where the four different Fermi topologies may coexist. As a consequence, the discussed phenomenon creates a physical basis to control the electronic properties of bilayer graphene with light.
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页数:6
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