Delamination mechanism in relation to adhesion of cubic boron nitride

被引：34
|
作者：
Kim, IH [1 ]
Kim, SH [1 ]
Kim, KB [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 04期
关键词：
D O I：
10.1116/1.581412
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The growth and delamination mechanism of cubic boron nitride (c-BN) film on silicon substrate was investigated with Fourier transform infrared (FTIR) spectroscopy and transmission electron microscopy (TEM), c-BN films were prepared by the helicon wave plasma chemical vapor deposition process on (100) Si. The film deposited under the intense impact of energetic ions is usually delaminated from the substrate after deposition. It is found that moisture in the air, as well as severe compressive stress in the film, contribute to him delamination. From FTIR and TEM characterization, a model for the delamination mechanism of c-BN film is suggested. Based on the delamination mechanism, several kinds of remedies such as post-annealing and post-N-2 plasma treatment were carried out to improve the adhesion. The effects of these respective remedies on the adhesion of c-BN film are also discussed. (C) 1998 American Vacuum Society. [S0734-2101(98)05404-9].
引用
收藏
页码：2295 / 2299
页数：5
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