Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors

Lasing action is achieved in InGaN vertical-cavity surface-emitting lasers (VCSELs) with dielectric distributed Bragg reflectors (DBRs). We fabricated III-nitride VCSELs by removing a SiC substrate from a III-nitride cavity with a dry etching technique and then wafer bonding the cavity and SiO2/ZrO2 DBRs. These VCSELs have a high quality factor of 460 and a spontaneous emission factor of 10(-2). We observed lasing at a wavelength of 401 nm at room temperature with optical pumping. This lasing action was demonstrated at a low threshold of 5.1 mJ/cm(2) by using a high-quality crystalline cavity and quantum-well layers without surface roughening or cracking. (C) 2003 American Institute of Physics.