Monoatomic steps on silicon surfaces

被引：8
|
作者：
Latyshev, AV [1 ]
Aseev, AL [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
USPEKHI FIZICHESKIKH NAUK | 1998年 / 168卷 / 10期
关键词：
D O I：
10.3367/UFNr.0168.199810c.1117
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The results of studies of monatomic steps on silicon surfaces using in-situ ultrahigh vacuum reflection electron microscopy are reviewed. The topics covered include the increase in dynamic step edge stiffness under non-equilibrium conditions; step bunch and step antibunch formation processes; electromigration effects; the anomalously high density of Si(111) adatoms; and the early stages of epitaxial growth.
引用
收藏
页码：1117 / 1127
页数：11
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