Amorphous silicon crystallisation by a long-pulse excimer laser

被引：0

作者：

Di Lazzaro, P ^{[1
]}

Bollanti, S ^{[1
]}

Bonfigli, F ^{[1
]}

Flora, F ^{[1
]}

Giordano, G ^{[1
]}

Letardi, T ^{[1
]}

Murra, D ^{[1
]}

Zheng, CE ^{[1
]}

Baldesi, A ^{[1
]}

机构：

[1] ENEA, Div FISLAC, I-00044 Frascati, Italy

来源：

XIII INTERNATIONAL SYMPOSIUM ON GAS FLOW AND CHEMICAL LASERS AND HIGH-POWER LASER CONFERENCE | 2000年 / 4184卷

关键词：

excimer laser; homogenizer; silicon annealing; super lateral growth; TFT; flat panel display;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we summarise the results of the annealing of a-Si films done at ENEA Frascati by the XeCl laser facility Hercules and the preliminary results of the characterisation work done on the first Italian industrial high-energy excimer laser, named Hercules L. Some information will be also given on a novel process to obtain homogeneous, large grain poly-Si and on a new homogeniser with zoom.

引用

页码：525 / 529

页数：5

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