Epitaxial growth of β-SiC on Si (100) by low energy ion beam deposition

被引：1

作者：

Zhou, XT ^{[1
]}

Sun, SX ^{[1
]}

Peng, HY ^{[1
]}

Wang, N ^{[1
]}

Lee, CS ^{[1
]}

Bello, I ^{[1
]}

Lee, ST ^{[1
]}

机构：

[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, COSDAF, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

关键词：

epitaxial growth; beta-SiC; ion beam;

D O I：

10.1016/S0925-9635(01)00423-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial P-silicon carbide (SiC) films on mirror-polished (100) Si substrates were deposited using low energy (150 eV) ion beam modification at different ion doses (1 X 10(17)/CM2, 1 x 10(17)/cm(2), 1 x 10(18)/cm(2), 1 x 10(19)/cm(2)). The Si substrates were exposed to a broad ion beam of hydrocarbon, argon, and hydrogen ions, generated in a Kaufman ion source. These ions reacted with the Si substrates and formed the epitaxial beta -SiC films. Amorphous carbon films were generated on top of beta -SiC films. Some voids were found with transmission electron microscopy (TEM) at the interface between the Si substrate and the beta -SiC film. By studying the ion dose dependence of the quality and thickness of the SiC and amorphous carbon films, we suggest that the formation of the epitaxial beta -SiC was driven by thermal diffusion of Si atoms in SiC and preferential etching of non-epitaxial SiC crystals by H ions. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1927 / 1931

页数：5

共 50 条

[1] Epitaxial growth of α-Fe film on Si(111) substrate by low-energy direct ion beam deposition
[J]. Shimizu, Saburo, 1600, (32):
[2] Growth of 3C-SiC(100) thin films on Si(100) by the molecular ion beam deposition
Matsumoto, T
Kiuchi, M
Sugimoto, S
Goto, S
[J]. SURFACE SCIENCE, 2001, 493 (1-3) : 426 - 429
[3] Growth of Co On Ag(100): A comparison of ultra low energy ion beam deposition and thermal deposition
Degroote, B
Dekoster, J
Degroote, S
Pattyn, H
Vantomme, A
Langouche, G
Hou, M
[J]. FUNDAMENTAL MECHANISMS OF LOW-ENERGY-BEAM-MODIFIED SURFACE GROWTH AND PROCESSING, 2000, 585 : 9 - 14
[4] Growth of SiC nanostructures on si (100) using low energy carbon ion implantation and electron beam rapid thermal annealing
Markwitz, A.
Johnson, S.
Rudolphi, M.
Baumann, H.
[J]. INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 3, NOS 4 AND 5, 2004, 3 (4-5): : 425 - 430
[5] Multilayer growth by low energy ion beam deposition
Joule Laboratory, Dept. Phys., Univ. Salford, M5 4WT, Salford, United Kingdom
[J]. J Magn Magn Mater, (731-733):
[6] Multilayer growth by low energy ion beam deposition
Joyce, DE
Telling, ND
Van den Berg, JA
Lord, DG
Grundy, PJ
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 198-99 : 731 - 733
[7] LOW-TEMPERATURE EPITAXIAL-GROWTH OF SI0.5GE0.5 ALLOY LAYER ON SI(100) BY ION-BEAM-ASSISTED DEPOSITION
PARK, SW
SHIM, JY
BAIK, HK
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (10) : 1399 - 1406
[8] EPITAXIAL-GROWTH OF SINGLE-CRYSTAL SI1-XGEX ON SI(100) BY ION-BEAM SPUTTER DEPOSITION
MEYER, F
SCHWEBEL, C
PELLET, C
GAUTHERIN, G
BUXBAUM, A
EIZENBERG, M
RAIZMAN, A
[J]. THIN SOLID FILMS, 1990, 184 : 117 - 123
[9] NUCLEATION AND EPITAXIAL-GROWTH OF INAS ON SI (100) BY ION-ASSISTED DEPOSITION
CHOI, CH
BARNETT, SA
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (22) : 2319 - 2321
[10] EPITAXIAL-GROWTH OF ALPHA-FE FILM ON SI(111) SUBSTRATE BY LOW-ENERGY DIRECT ION-BEAM DEPOSITION
SHIMIZU, S
SASAKI, N
SEKI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (7A): : L943 - L946

← 1 2 3 4 5 →