Mechanisms of carriers transport in Ni/n-SiC, Ti/n-SiC ohmic contacts

被引：3
|
作者：
Kisiel, R. [1 ]
Guziewicz, M. [3 ]
Golaszewska, K. [3 ]
Sochacki, M. [1 ]
Paszkowicz, W. [2 ]
机构：
[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[3] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
来源：
MATERIALS SCIENCE-POLAND | 2011年 / 29卷 / 03期
关键词：
SiC; ohmic contact; carrier transport; silicide; carbide; SILICON-CARBIDE; SCHOTTKY-BARRIER; NICKEL SILICIDE; GRAPHITE;
D O I：
10.2478/s13536-011-0036-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A mechanism of carriers transport through metal-semiconductor interface created by nickel or titanium-based ohmic contacts on Si-face n-type 4H-SiC is presented herein. The mechanism was observed within the temperature range of 20 A degrees C A center dot 300 A degrees C which are typical for devices operating at high current density and at poor cooling conditions. It was found that carriers transport depends strongly on concentration of dopants in the epitaxial layer. The carriers transport has thermionic emission nature for low dopant concentration of 5x10(16) cm(-3). The thermionic emission was identified for moderate dopant concentration of 5x10(17) cm(-3) at temperatures higher than 200 A degrees C. Below 200 A degrees C, the field emission dominates (for the same doping level of 5x10(17) cm(-3)). High dopant concentration of 5x10(18) cm(-3) leads to almost pure field emission transport within the whole investigated temperature range.
引用
收藏
页码：233 / 240
页数：8
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