Influence of porosity on electrical properties of low-k dielectrics irradiated with vacuum-ultraviolet radiation

被引：3
|
作者：
Choudhury, F. A. [1 ,2 ]
Nguyen, H. M. [1 ,2 ]
Baklanov, M. R. [3 ]
de Marneffe, J. F. [4 ]
Li, W. [1 ,2 ]
Pei, D. [1 ,2 ]
Benjamin, D. I. [1 ,2 ]
Zheng, H. [1 ,2 ]
King, S. W. [5 ]
Lin, Y. -H. [6 ]
Fung, H. -S. [6 ]
Chen, C. -C. [6 ]
Nishi, Y. [7 ]
Shohet, J. L. [1 ,2 ]
机构：
[1] Univ Wisconsin Madison, Plasma Proc & Technol Lab, Madison, WI 53706 USA
[2] Univ Wisconsin Madison, Dept Elect & Comp Engn, Madison, WI 53706 USA
[3] North China Univ Technol, Beijing 100144, Peoples R China
[4] IMEC, B-3001 Leuven, Belgium
[5] Intel Corp, Log Technol Dev, Hillsboro, OR 97124 USA
[6] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
[7] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 12期
基金：
美国国家科学基金会;
关键词：
CONSTANT MATERIALS; FILMS;
D O I：
10.1063/1.4962899
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
During plasma processing, low-k dielectrics are exposed to high levels of vacuum ultraviolet (VUV) radiation emitted from the plasma. The porous structure of these materials makes them more sensitive to modification because of their low density and consequently deep penetration of active species into the film. Here, we investigate the changes to electrical properties of porous low-k dielectrics as a function of porosity after VUV irradiation. Organosilicate low-k films of porosities between 30% and 50% were exposed to synchrotron VUV radiation at 8 eV with a fluence of approximately 5 x 10(14) photons/cm(2). Capacitance-voltage measurements showed an increase in the dielectric constant along with a flat-band voltage shift. FTIR results show methyl depletion as well as water uptake after VUV treatment. These show that deterioration of the electrical properties after VUV exposure and the degree of damage are found to be higher for the more porous films. Published by AIP Publishing.
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页数：4
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